TVS diode vs RCD snubber for protect IGBT peak voltage

[thedark]

I am thinking of making an SSTC, what advantage does one have over the other to protect igbt from voltage spike.
on reddit they told me this "The capacitance of the TVS will slow down the rise time and therefore reduce the voltage you can achieve. Instead of a TVS, use an RCD snubber. The diode has low capacitance (it doesn't slow down your signal ) and turns on only when the IGBT voltage exceeds the voltage on the capacitor. If you add a Zener diode across the capacitor, you guarantee that the IGBT voltage remains within its ratings."

[klugesmith]

Are you talking about voltage spikes from rare faults, or ones that would happen in every cycle?
TVS diodes are primarily rated for pulse energy dissipation, not continuous power dissipation.
I'm no expert, but would bet that most TVS models have not been characterized for performance after billions of periodic pulses.
[edit]
The quote in OP might apply to the former, where normal operation doesn't reach the TVS clamping voltage.   Then you need to determine the TVS capacitance and decide if it's a problem in the high frequency application.

[thedark]

It is my first time trying to make a Tesla coil and I don't want the very expensive IGBT to explode , I see that people normally use a TVS diode between the collector and emitter of the IGBT so that the peak voltage does not exceed the nominal voltage of the IGBT and clamp it at a safe level, and from a semi-random question on TVS reddit I found another type of voltage spike suppressor, the RCD snubber.

[davekni]

Most voltage spiking is caused by parasitic inductance.  The most important two ways to minimize chance of spike damage are:
1) Use IGBTs well below specified maximum Vce.  Most IGBT parameters such as switching energy are specified at half of max Vce.  That's a typical operating condition.  Thus if you are using 230Vac input into bridge rectifier, Vbus will be 325V.  IGBTs rated for 650Vce max would be a good choice.  600V IGBTs may be fine if second condition is met:
2) Minimize interconnect inductance of bridge.  Inductance internal to IGBT packages can't be eliminated.  Most external inductance can be minimized.  Here's my tutorial showing one good half-bridge layout (and full-bridge farther down in thread):
    https://highvoltageforum.net/index.php?topic=1324.msg9795#msg9795
Many designs have no additional components for Vce spike protection.  (Vge clamping with smaller 500W or 600W TVS diodes is still recommended, with TVS diodes soldered close to IGBT G and E terminals.)
There are some cases on this forum where TVS diodes failed first, then failed diode destroyed IGBT.  TVS diodes usually fail to shorted, so overload opposite IGBT.  IGBTs sometimes handle more transient power than do TVS diodes.
TVS diodes and RCD snubbers help only if their interconnect inductance is lower or at least similar to that of bridge interconnect.  That's why it is usually better to just lower bridge inductance.
R+C snubbers can reduce spikes further if inductance can't be reduced enough.  But R+C snubbers dissipate more power in general.
TVS diode capacitance is low enough that it will have no significant impact on coil performance (in case you decide to use TVS diodes on Vce).
Being your first coil, I'd also suggest:
    https://highvoltageforum.net/index.php?topic=2191.msg16147#msg16147
Good cooling is important for IGBT survival.  For even better cooling, you could consider adding heat spreader plates below IGBTs or electrically-live heat sinks.  And good thermal past for whatever configuration you use.